Center for Energy Efficient Electronics Science (E3S) - Energy-Efficient Electronic Research Educat
Time 2020-12-22 12:03:04Web Name: Center for Energy Efficient Electronics Science (E3S) - Energy-Efficient Electronic Research Educat
WebSite: http://www.e3s-center.org
ID:142561
Keywords:
Efficient,Electronics,Energy,Description:
Site VisitLoginSearch this website Research Experience for Undergraduates LEARN MORE Our Transfer-to-Excellence REU students from community colleges across California continue to make us proud! COVID-19 Pandemic READ MESSAGE A message from E3S Toplogical Band Engineering of Graphene Nanoribbons LEARN MORE E3S researchers develop nanoscale electron traps with potential applications for quantum computers Prof. Tsu-Jae King Liu named Dean of Berkeley Engineering READ MORE E3S Educational Videos LEARN MORE Educational videos created by E3S students and postdocs teach students of all levels the science behind electronic devices Ultrafast Magnetic Memory READ MORE E3S researchers demonstrate ultrafast electrical pulse-induced magnetic switching Berkeley Symposia: An E3S Legacy LEARN MORE Thank you to our presenters and attendees for five great symposia Welcome to the E3S website! About E3S The Center for Energy Efficient Electronics Science (E3S) is a Science and Technology Center (STC) funded by the U. S. National Science Foundation, and is a consortium of world class academic institutions. We are working in a collaborative and innovative environment to make fundamental and conceptual breakthroughs in the underlying physics, chemistry, and materials science of electronic systems, breakthroughs needed to reduce these systems’ energy consumption by orders of magnitude. Read MoreE3S Research SeminarsSee the complete schedule of all upcoming seminars for the Fall 2020 semester. W. S. Leong, Q. Ji, N. Mao, Y. Han, H. Wang, A. J. Goodman, C. Su, Y. Guo, P.-C. Shen, Z. Gao, D. A. Muller, W. A. Tisdale and J. Kong, “Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides,” J. Am. Chem. Soc., vol. 140, pp. 12354–12358, Sep 2018. doi: 10.1021/jacs.8b07806 D. J. Rizzo, G. Veber, T. Cao, C. Bronner, T. Chen, F. Zhao, H. Rodriguez, S. G. Louie, M. F. Crommie and F. R. Fischer, “Topological band engineering of graphene nanoribbons,” Nature, vol. 560, pp. 204-208, Aug 2018. doi: 10.1038/s41586-018-0376-8 J. Hong, M. Stone, B. Navarette, K. Luongo, J. Bokor and S. Khizroev, “Multilevel three-dimensional spin computer,” Appl. Phys. Lett., vol. 112, pp. 112402-4, Mar 2018. doi: 10.1063/1.5021336 X. Zhao, C. Heidelberger, E. A. Fitzgerald, W. Lu, A. Vardi and J. A. del Alamo, “Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts,” IEEE Transactions in Electron Devices, vol. 65, pp. 3762-3768, Sep 2018. doi: 10.1109/TED.2018.2859202 M. S. Eggleston, S. B. Desai, K. Messer, S. A. Fortuna, S. Madhvapathy, J. Xiao, X. Zhang, E. Yablonovitch, A. Javey and M. C. Wu, “Ultrafast Spontaneous Emission from a Slot-Antenna Coupled WSe2 Monolayer,” ACS Photonics, vol. 5, no. 7, pp. 2701–2705, Jul 2018. doi: 10.1021/acsphotonics.8b00381 B. Osoba, B. Saha, S. F. Almeida, J. Patil, L. E. Brandt, M. E. D. Roots, E. Acosta, J. Wu and T.-J. K. Liu, “Variability study for low-voltage micro-electro-mechanical relay operation,” IEEE Transactions on Electron Devices, Vol. 65, No. 4, pp. 1529 – 1534, Feb 2018. doi: 10.1109/TED.2018.2807409TAGS:Efficient Electronics Energy
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